InAsSb photovoltaic detectors Infrared detectors with band-pass filter (3.3 µm, 3.9 µm, 4.26 µm, 4.45 µm) 1 With band-pass filter P13243 series High sensitivity High-speed response High shunt resistance Compact, surface mount ceramic package Compatible with lead-free solder reflow (ceramic package) Features Gas measurement
We have developed a new InAsSb photovoltaic detector (P16702-011MN) with preamp offering high sensitivity to mid-infrared light, up to 11 micrometers (μm) in wavelength. We achieved this by combining the latest InAsSb (indium arsenide antimonide) mid-infrared detector with our unique circuit design technology. Compared to our previous detector
InAsSb photovoltaic detectors P13243 series High-speed response and high sensitivity in the spectral band up to 5 μm Infrared detectors 1 High sensitivity High-speed response High shunt resistance Small size ceramic package for surface mount (P13243-013CA) Applicable to lead-free solder refl ow (P13243-013CA)
Two-element InAs and InAsSb Photovoltaic IR Detectors for Gas Detection InAs/InAsSb SL Technology Affordable Detection Module (T2SL) photoconductive (PC) and photovoltaic (PV) detectors, operating at room
InAsSb Detector with TEC Thorlabs offers a thermoelectrically cooled InAsSb photodetector (item # PDA10PT). This detector features a thermoelectric cooler (TEC), which uses a thermistor feedback loop to hold the temperature of the detector element at -30 °C, minimizing thermal contributions to the output signal. Photovoltaic Detector with
The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as NO, NO2, SO2, and H2S. The P12691-201G is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen.
The P15742 series is one-dimensional InAsSb photovoltaic detector array in a ceramic DIP (dual inline package). They have a back-illuminated structure that achieves low crosstalk. These are environmentally friendly infrared detectors that do not use lead, mercury, or cadmium, which are substances restricted by the RoHS Directive. Applications
InAsSb photovoltaic detectors P16114-011MNP16614-011CN Infrared detector with high photosensitivity (up to 10 µm band) 1 Structure Parameter P16114-011MN P16614-011CN Unit Window material None - Package TO-5 Ceramic - Photosensitive area 0.7 × 0.7 mm Field of view 101 86 degrees
InAsSb photovoltaic detectors P13894 series High-speed response and high sensitivity in the spectral band up to 11 μm, infrared detectors 1 Structure Parameter NEW P13894-011CN P13894-011NA P13894-011MA P13894-211MA Unit Window material None None Ge with AR coating Ge with AR coating - Package Ceramic TO-5 TO-8 -
InAsSb photovoltaic detector Infrared detectors with improved photosensitivity temperature coefficient (up to 5 m band) P16112-011MA P16612-011CA/CN P16849-013CN Features High sensitivity High-speed response High shunt resistance Compact, surface mount type ceramic package Compatible with lead-free solder reflow RoHS compliant (lead, mercury
The P12691-201G is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystalgrowth technology, back-illuminated structure and integrating a lens. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as NO, NO2, SO2, and H2S.
InAsSb photovoltaic detectors P13894 series 4 Specifications of two-stage TE-cooler (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit TE-cooler allowable current ITE max - - 1.0 A TE-cooler allowable voltage VTE max - - 1.2 V Thermistor resistance Rth 8.1 9.0 9.9 kΩ
Explore high-performance MCT detectors and photovoltaic sensors at VIGO Photonics. Our advanced technology ensures superior precision and sensitivity. Elevate your applications with our cutting-edge detectors and sensors. Two-element InAs and InAsSb Photovoltaic IR Detectors for Gas Detection InAs/InAsSb SL Technology Affordable Detection
The P13243-222MS is a photovoltaic type infrared detectors that has achieved high sensitivity in the spectral band up to 5 μm using Hamamatsu original crystal growth technology and process technology. P13243 series are environmentally friendly infrared detectors and do not use lead, mercury or cadmium, which are substances restricted by the RoHS Directive. They are
The P13894 series are photovoltaic type detectors that have achieved high sensitivity in the spectral range up to 11 µm using Hamamatsu unique crystal growth technology and process technology. These products are environmentally friendly infrared detectors and do not use mercury or cadmium, which are substances restricted by the RoHS Directive.
InAsSb photovoltaic detectors InAsSb photovoltaic detector arrays Type II superlattice infrared detector Quantum cascade photodetector Thermopile detectors Two color detectors Infrared detector modules with preamplifier Infrared photodiode modules Infrared detector accessories. Home Products Optical sensors Infrared detectors.
In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are
Photovoltaic infrared detectors in which the semiconductor element is made of InGaAs, InAs, InAsSb or superlattice material. These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.
PVIA-5-1x1-TO39-NW-36 is an uncooled photovoltaic IR detector based on InAsSb heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range
SHIZUOKA, Japan, Jan. 31, 2023 — The P16702-011MN InAsSb photovoltaic detector with preamp from Hamamatsu Photonics KK offers high sensitivity to mid-IR light, up to 11 μm in wavelength. Size and cost is reduced compared to previous detector modules. An InAsSb mid-IR detector is combined with circuit design technology.
InAsSb photovoltaic detectors ack-illuminated type infrared detectors with band-pass filter (3.3 m, .9 m, 4.2 m, 4.45 m) With band-pass filter P1112/P1612/P1849 series High sensitivity High-speed response High shunt resistance Compact, surface mount ceramic package Compatible with lead-free solder reflow (ceramic package) Features
InAsSb photovoltaic detectors P13243 series 9 KSPDB0418EA Time Preheat 60 to 120 s Soldering 60 to 150 s 217 °C 200 °C 150 °C Cooling 6 °C/s max. Temperature Temperature increase 3 °C/s max. Peak temperature 240 °C max. Peak temperature - 5 °C 30 s max. 25 °C to peak temperature 8 m max.
InAsSb photovoltaic detectors P13894 series High-speed response and high sensitivity in the spectral band up to 11 μm, infrared detectors 1 Structure Parameter NEW P13894-011CN P13894-011NA P13894-011MA P13894-211MA Unit Window material None None Ge with AR coating Ge with AR coating -
InAsSb photovoltaic detectors P13894 series High-speed response and high sensitivity in the spectral band up to 11 μm Infrared detectors 1 High sensitivity High-speed response High shunt resistance Non-cooled (P13894-011NA/-011MA), compact package Features Gas detection (CH4, CO2, CO, NH3, O3, etc.) Radiation thermometers
InAsSb photovoltaic detectors P16113-011MNP16613-011CN Infrared detector capable of room temperature operation (up to m band) Structure Parameter P16113-011MN P16613-011CN Unit Window material None - Package TO-5 Ceramic - Photosensitive area 0.7 × 0.7 mm Field of view 101 86 degrees Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Two-element InAs and InAsSb Photovoltaic IR Detectors for Gas Detection InAs/InAsSb SL Technology Affordable Detection Module (T2SL) photoconductive (PC) and photovoltaic (PV) detectors, operating at room temperature or thermoelectrically cooled. These detectors achieve excellent parameters without cryogenic cooling (LN2). They do not
Hamamatsu offers single-element photovoltaic InAsSb detectors with cutoffs of ~5–6, 8.3, 10.2, 11 μm with corresponding peak detectivities of 5 × 10 9, 6 × 10 9, 3.2 × 10 8, 7 × 10 7 cm-Hz 1/2 /W at their specified operating temperatures (see Fig. 10.12), which range from uncooled to one- or two-stage TE cooled to liquid nitrogen [147].
Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In 0.88 Al 0.12 As 0.80 Sb 0.20 is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In 0.88 Al 0.12 As<sub>0.80</sub>Sb<sub>0.20</sub> nearly matches with
Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The
InAsSb photovoltaic detectors P13894 series High-speed response and high sensitivity in the spectral band up to 11 μm Infrared detectors 1 High sensitivity High-speed response High shunt resistance Non-cooled (P13894-011NA/-011MA), compact package Features Gas detection (CH4, CO2, CO, NH3, O3, etc.) Radiation thermometers
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