hyper-hemispherical, hemispherical silicon lens for Thz applications Jan. 15, 2019 Silicon suited for making THz components, it is a very important tool for coupling terahertz (THz) radiation into antennas and detectors in integrated circuits.
lens. In the VIGO System detectors com-prising a GaAs substrate and an integrated immersion lens made of the same material, the refractive index of the lens is equal to 3.3. That means the detectivity is improved 3.3 times in a detector with a hemispherical lens, and nearly 11 times in a detector with a hy-perhemispherical lens. Both types of
The focal length f of the meta-lens is 38 μm. θ denotes the incident angle. (e-f) Power flux distributions on the x - z cross section (y = 0 μm) of the meta-lens integrated HgCdTe detector for the incident angles of 2.5°, 5°. The focal length of the meta-lens is 73 μm.
The detector was shown to... | Terahertz, HTS and Josephson Junctions | ResearchGate, the professional network for scientists. Hyper-hemispherical lens comprising hemispherical lens extended
The HgCdTe detector is actually a single pixel of a focal plane array and ready for flip-chip bonding. The meta-lens consisting of a nano-pillar array is proposed to be
The photoconductivity and photovoltaic effect-based devices are the most widely exploited photon detectors of the infrared (IR) radiation. As we already know from the previous chapters, photon detectors have significant advantages over other technologies in the field of detecting IR radiation such as fast response, high sensitivity, and wavelength selectivity.
A hyperhemispherical lens forms an image on a virtual plane behind the sensor element, resulting in an effective optical area greater than the physical sensor area. A standard hemispherical immersion lens forms an image in the plane of the sensor element.
We present the study on performance optimization and resonant frequency modification of terahertz detectors with the use of hyper-hemispherical silicon superstrate lenses. A series of detectors from 580 GHz to 2 THz which employ a monolithically integrated patch-antenna-coupled field-effect-transistor were fabricated in a commercial 65nm CMOS process
These photodiodes operate in photovoltaic mode and provide coverage for Mid-IR wavelengths through 10.6 µm. The detectors are optimized for best performance at a specific wavelength (5.0 µm, 8.0 µm, or 10.6 µm). Each HgCdTe (MCT) sensor element is integrated
A standard hemispherical immersion lens forms an image in the plane of the sensor element. These photodiodes operate in photovoltaic mode and provide coverage for Mid-IR wavelengths through 10.6 µm. The detectors are optimized for best performance at a specific wavelength (5.0 µm, 8.0 µm, or 10.6 µm).
Abstract: In this article, we present a comprehensive study to understand the image formation and associated resolution limitations of hyper-hemispherical high-resistivity floating-zone silicon (HRFZ-Si) lens-integrated terahertz (THz) cameras, and we extend this understanding into THz super-resolution imaging applications. Along these lines, design tradeoffs between fixed field
Inspired by the antenna-coupled hyper-hemispherical lens pixel design, and considering the advantages offered by metamaterials, an alternative planar lenslet was prototyped [33, 34], relying on
Optical immersion of micro-lenses by CdZnTe substrate was used to improve the performance of the devices and the hyper-hemispherical micro-lens with a diameter of 1.5mm was made by single point
Photovoltaic detectors (photodiodes) are semiconductor structures with one (PV) or multiple (PVM), homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photodiodes have complex current voltage characteristics.
Hyper hemispheric lens may be kept quite compact in dimension and the need of a single imaging detector, for a so large field of view, strongly reduces costs. In this paper, we explore possible applications of a multi-purpose space device based on a hyper hemispheric lens on board of micro and nanosatellites .
sensor with the hyper-hemispherical HRFZ-Si lens (a), and of the FPA sensor, including a zoomed view showing a pixel cell (b). Lens and FPA sensor centers are aligned. The detectors are thus illuminated through the lens from the chip backside. Lens radius R and the extension length X are 7.5 mm and 2.75 mm, respectively.
Photovoltaic Detectors Optimized for Mid-IR Wavelength Ranges; in contrast to the 180° acceptance angle that would be obtained if a hemispherical lens were used. Detectors with TECs The VML8T4 and VML10T4 detectors feature integrated four-stage TECs, which enable their operating temperatures of -78 °C.
The invention relates to an immersed type photovoltaic detector comprising a substrate transparent to infrared radiations and a wafer in semiconducting material. A PN junction is formed in the wafer, on the side opposite the substrate, with a zone of conductivity opposite that of the rest of the wafer. The substrate, on the side opposite the wafer, has the form of a
The detector array and the meta-lens array can both be fabricated using standard planar photolithography technology, and the combination has the potential to achieve larger scale arrays. In order to enhance the directivity and coupling efficiency, a planar antenna is generally equipped with a hyper-hemispherical silicon lens. However, a Si
Photovoltaic Detectors Optimized for Mid-IR Wavelength Ranges; in contrast to the 180° acceptance angle that would be obtained if a hemispherical lens were used. Detectors with TECs The VML8T4 and VML10T4 detectors feature integrated four-stage TECs, which enable their operating temperatures of -78 °C.
The paper presents terahertz performance of integrated lens antenna which is composed of log spiral antenna as feed and hyper hemispherical lens. Designing and terahertz performance of planar log
The bowtie structure was first proposed by George et al. and applied to many THz detectors [20,21,22,23,24]. Because of the simple structure and low cost, it is a good choice to match the impedance with YBCO JJ mixer and feed it by CPSs. The substrate lens can be hemispherical, hyper-hemispherical and elliptical, seen in Figure 1b–d. As
Both types of lenses (hemispherical and hyperhemispherical) are available from the VIGO Photonics products catalogue. A hyperhemispherical lens is of fered as a standard. It needs to be stressed that if a hyperhemispherical lens is used, the angle of view (acceptance angle) of the detector is limited to 35 degrees, which may be a significant
lens arrangement is performed to derive the total gain of the system. C. Hyper-hemispherical silicon lens To reduce substrate modes and improve coupling at the substrate-air interface, an optical lens is recommendable. We use a hyper-hemispherical lens made from high-resistivity float zone silicon (HRFZ-Si) in our setup [7]. The HRFZ-Si
A hyper-hemispherical high-resistivity silicon lens is used to improve the beam quality of THz QCL. Then a quasi-Gaussian light beam is acquired in imaging system. A THz real-time imaging system is constructed by employing a two dimensional wobbling mirror to eliminate the interference of the THz light.
Hyper hemispheric lens may be kept quite compact in dimension and the need of a single imaging detector, for a so large field of view, strongly reduces costs. In this paper, we explore possible applications of a multi-purpose space device based on a hyper hemispheric lens on board of micro and nanosatellites.
Light-emitting diodes (LEDs) have shown advantages in simulating complex terrestrial solar spectrum. However, it has difficulty to simulate the geometric characteristics of direct sunlight with one solar constant (100 mW/cm 2) this paper, A method to collect full aperture light with hyper-hemispherical aplanatic lens has been proposed, and a multi-source
Request PDF | On Jul 5, 2021, R. Kress and others published THz Detectors and Emitters with On-Chip Antenna aligned on Hyper-Hemispherical Silicon Lenses | Find, read and cite all the research you
mm photovoltaic detector optically immersed with CdZnTe hemispherical lens. The focal point of the hemispherical lens is 9.85 mm (0.388 inch) from the front surface of the detector housing.
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