Performance of Cu2O/ZnO Solar Cell Prepared By Two-Step Electrodeposition. J L. Papadimitriou N. Economou D. Trivich. Materials Science, Physics Chemistry, Materials Science. 1979; Using Auger electron spectroscopy, the region near the front contact of cuprous oxide front‐wall solar cells was investigated. In cells showing large
Copper-Cuprous Oxide (Cu2O/Cu) Backwall solar cells were fabricated using thermal oxidation method for the Cu2O thin film deposition. By connecting the cells in an experimental circuit and varying the load resistance from 0Ω to ∞, the short-circuit current, open-circuit voltage, and maximum power point were determined for each of the cell samples.
Feb 27, 1998· Cuprous oxide (Cu 2 O) is a non stoichiometric defect semiconductor. It is envisaged that this semiconductor could be utilised for the fabrication of low-cost solar cells. Copper foil samples, were oxidised in air between 200°C and 1050°C. The oxide films grown were then investigated by means of both XRD and SEM. The electrical characteristics of Cu 2 O
Feb 1, 1981· Heterojunction solar cells were made on Cu 2 O by sputtering In 2 O 3, SnO 2, CdO and mixtures of CdO and SnO 2 and by thermal evaporation of ZnSe. Photovoltaic effects
Dec 20, 1996· YJe found that a narrow potential domain, from 0 V vs SCE to -300 mV vs S CE, is available for the potentiostatic electrodeposition of cuprous oxide thin films and extension of this domain towards more cathodic potentials will result in theco- Deposition of copper. Current-potential scam were used to investigate the electrodeposition of cuprous oxide thin films in an
Cuprous oxide, with a band gap of 2.0 eV, is an attractive material for solar cells because of low cost and great availability. The current conversion efficiency is 1%, but theoretical estimates
In this review the developments of Cuprous Oxide (Cu₂O) solar cells are reviewed. We discuss the properties of Cuprous Oxide and the methods of the production of Cuprous Oxide. Subsequently, a discussion on the performance
Mar 1, 2019· We improved the photovoltaic properties of Cu 2 O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency (3.21%) in an AZO/p-Cu 2 O heterojunction solar cell prepared with optimized pre-sputtering conditions using our
May 13, 2011· Cuprous oxide (Cu2O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu2O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films
DOI: 10.1016/J.SOLMAT.2008.09.023 Corpus ID: 97401865; Electrochemically deposited p–n homojunction cuprous oxide solar cells @article{Han2009ElectrochemicallyDP, title={Electrochemically deposited p–n homojunction cuprous oxide solar cells}, author={Kunhee Han and Meng Tao}, journal={Solar Energy Materials and Solar Cells}, year={2009},
Cuprous oxide (Cu 2 O) is naturally p-type, which has prevented an efficient Cu 2 O solar cell. n-Type doping of Cu 2 O is demonstrated during electrochemical deposition by adding a chlorine (Cl) Expand
Jan 1, 2013· Cu 2 O (for the crystal structure, see Fig. 6.1) is one of the stable phases of the three well-established copper oxide compounds (the others are Cu 4 O 3 and CuO). It crystallizes in a simple cubic Bravais lattice (Cuprite-Mindat directory, 2010, Cuprite—Webmineral, 2010, Frondel, 1941, Wells, 1984).The space group is Pn3m or O h 4 s unit cell contains six atoms,
Copper-Cuprous Oxide (Cu2O/Cu) Backwall solar cells were fabricated using thermal oxidation method for the Cu2O thin film deposition. By connecting the cells in an experimental circuit and varying the load resistance from 0Ω to ∞, the short-circuit current, open-circuit voltage, and maximum power point were determined for each of the cell samples.
Oct 15, 2015· Cuprous oxide (Cu 2 O) is a direct-bandgap semiconductor with a bandgap (E g) of about 2.1 eV.This material usually shows p-type conductivity without intentional doping. 1) The optical absorption coefficients of this material are above 10 4 cm −1 near the band edge. 2) In addition, Cu 2 O can be prepared by low-cost methods, for example, oxidation of Cu sheets 3)
Jan 1, 1986· Cuprous oxide is a nontoxic semiconductor with optical absorption coefficients which make it suitable for fabrication of cells in the thin form. This in turn lowers the cost of
Dec 1, 1988· Introduction Cuprous oxide (Cu20) is a material researchers have found very difficult to work with. A front wall Schottky barrier solar cell is usually fabricated by evapo- rating a metal on top of Cu20 under high vacuum conditions thus making a Schottky barrier. Radiat. Effects Left., 76 (1983) 87. 30 R. J. Iwanowski and D. Trivich
In laboratory experiments Cu2O sheets have been isolated, both single crystal and polycrystal, to form Schottky barrier junctions with a variety of metals (especially copper) and the rectifying and photovoltaic properties of cells in the front-wall configuration have been investigated. The Cu2O is prepared by oxidation of copper sheet in air and the junctions on Cu2O are prepared by
Solar Cells, 3 (1981) 73 - 80 73 HETEROJUNCTION SOLAR CELLS ON CUPROUS OXIDE LEONIDAS PAPADIMITRIOU and NICOLAOS A. ECONOMOU Physics Department, University of Thessaloniki (Greece) DAN TRIVICH Department of Chemistry, Wayne State University, Detroit, Michigan (U.S.A.) (Received May 14, 1980; accepted July 14, 1980) Summary Heterojunction
Cuprous oxide (CU20) is an interesting candidate as a solar absorber due to its low processing and materials costs and the abundance of its component elements in the earth''s crust.
Jan 20, 2005· Spray pyrolysis of aqueous solutions that include copper(II) acetate, glucose, and 2-propanol was studied for the formation of cuprous oxide (Cu 2 O) thin films on glass substrates. The deposition conditions, based on the phase relations of the films, were investigated in terms of solution concentration and substrate temperature.
Sep 1, 1992· Semantic Scholar extracted view of "A study of electrodeposited cuprous oxide photovoltaic cells" by R. N. Briskman. Skip to search form Skip to main content Skip to account menu. Semantic Scholar''s Logo. Search 222,076,499 papers from all fields of science. Search.
Jan 1, 1986· The photovoltaic properties of cuprous oxide (Cu 2 O) are reviewed and discussed. The emphasis, however, is on reviewing the characteristics of Cu 2 O prepared by different techniques such as high-temperature thermal oxidation, low-temperature thermal oxidation, electro-deposition, anodic oxidation, chemical oxidation and reactive sputtering. It is shown
Jun 1, 2006· 1.. IntroductionCuprous oxide (Cu 2 O), a direct-gap semiconductor with a band-gap energy of 2.0 eV, has been regarded as one of the most promising materials for application to photovoltaic cells (Pollack and Trivich, 1975).The attractiveness of Cu 2 O as a photovoltaic material lies in the fact that the constituent materials are nontoxic and abundantly available on
May 1, 1979· Using Auger electron spectroscopy, the region near the front contact of cuprous oxide front‐wall solar cells was investigated. In cells showing large photovoltages, a maximum of the copper concentration being by about 4 at.% percent higher than the bulk concentration was observed at a distance of 70 Å from the metal‐semiconductor interface.
Feb 27, 1998· Cuprous oxide (Cu 2 O) is a non stoichiometric defect semiconductor. It is envisaged that this semiconductor could be utilised for the fabrication of low-cost solar cells. Copper foil samples, were oxidised in air between 200°C and 1050°C.
Copper-Cuprous Oxide (Cu2O/Cu) Backwall solar cells were fabricated using thermal oxidation method for the Cu2O thin film deposition. By connecting the cells in an experimental circuit and varying the load resistance from 0Ω to ∞,
Preliminary results are presented on photovoltaic cells prepared with thin Cu2O films electrodeposited by 0.4-V cathodic reduction of an alkaline cupric lactate solution either on metal substrates or on transparent conducting glass coated with SnO2, In2O3 or Cd2SnO4. It is shown that photovoltaic cells can be fabricated with electrodeposited Cu2O, both in front- and back
Cuprous oxide MIS solar cells were made with SiO2 interfacial layers of thickness ranging from 10 to 100 A, and semitransparent layers of Au, Cu, Ag and Al. Results from current-voltage measurements show that Au/SiO2/Cu2O MIS devices are ohmic in nature and have no photovoltaic effect. Ag/SiO2/Cu2O, Cu/SiO2/Cu2O and Al/SiO2/Cu2O exhibit rectifying and
substance: cuprous oxide (Cu2O) property: transport properties (Reviews in [74N, 75P]) Cu2O is usually p-type. No n-type material could be prepared. As grown material has high resistivity (ρ > 106 Ω cm). ρ depends strongly on annealing or photoexcitation [74N]. The temperature and oxygen partial pressure
Jan 1, 2010· A photo-electrochemical rechargeable solar cell with an inorganic charge-storage material as a third electrode was investigated. The energy-storable function was based on the redox reactions in
Semantic Scholar extracted view of "Cuprous oxide Schottky barrier photovoltaic cells" by D. Trivich et al. Skip to search form Skip to main content Skip to account menu @inproceedings{Trivich1976CuprousOS, title={Cuprous oxide Schottky barrier photovoltaic cells}, author={Dan Trivich and Edward Y. Wang and Richard J. Komp and F. H. Ho
Apr 17, 2006· We report on the fabrication of heterojunction solar cells made by deposition of transparent conducting oxide (TCO) films on Cu2O substrates. The TCO films have been grown by ion beam sputtering on good quality Cu2O sheets prepared by oxidizing copper at a high temperature. The best solar cell has reached an open-circuit voltage of 0.595V, a short-circuit
Research on the fabrication and characteristics of solar cells based on heterojunctions of Cu/sub 2/O with SnO/sub 2/, In/sub 2/O/sub 3/, CdO, and mixtures of CdO and SnO/sub 2/ is
Feb 23, 2011· Copper oxide-titanium dioxide (TiO2) p–n junctions are promising materials for photovoltaic devices and may reduce production costs due to their low cost and inexpensive production methods
The effects of transient and steady−state illumination on the electrical properties of single−crystal cuprous oxide have been investigated in the temperature range from 230 to −20 °C. For samples equilibrated well within the region of Cu2O stability, conduction was governed by an acceptor level at 0.4 eV above the valence band as determined from the temperature dependence of the Hall
Oct 15, 2015· Abstract. We developed a device simulation model of cuprous oxide (Cu 2 O)-based heterojunction solar cells. The developed model well reproduces the reported
Cuprous oxide, with a band gap of 2.0 eV, is an attractive material for solar cells because of low cost and great availability. The current conversion efficiency is 1%, but theoretical estimates are >13%.
Aug 14, 2015· A Cu nanowire (NW)/cuprous oxide (Cu2O)-based semiconductor-liquid junction solar cell with a greatly enhanced efficiency and reduced cost was assembled. The Cu NWs function as a transparent electrode as well as part of the Cu NWs/ Cu2O coaxial structures, which remarkably benefit the charge separation. The best solar cell reached a conversion efficiency
We improved the photovoltaic properties of Cu 2 O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency (3.21%) in an AZO/p-Cu 2 O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly
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