A Seminar with Ali Javey, UC Berkeley, Electrical Engineering and Computer Sciences Friday 17 October, at 11 AM Macleod 418 ABSTRACT: III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large
A direct thin-film path towards low-cost large-area III-V photovoltaics Rehan Kapadia 1,2*, Zhibin Yu *, Hsin-Hua H. Wang 1,2, Maxwell Zheng, Corsin Battaglia1,2, Mark Hettick 1,2, Daisuke Kiriya, Kuniharu Takei1,2, Peter Lobaccaro2,3, Jeffrey W. Beeman2, Joel W. Ager2, Roya Maboudian3, Daryl C. Chrzan2,4 & Ali Javey1,2 1Electrical Engineering and Computer
The growth of semiconductor nanowires (NWs) 1,2,3,4,5 via the VLS growth mode and the epitaxial layer transfer 6,7 of semiconductors has proven to be very versatile, yielding a wide variety of materials on a multitude of substrates with excellent optoelectronic properties 4,5,8.VLS-grown NWs exhibit circular or faceted cross-sections 9, depending on the
The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth. Growth mechanism of single-crystalline InP.
A direct thin-film path towards low-cost large-area III-V photovoltaics. R. Kapadia Zhibin Yu +11 authors A. Javey. The first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils is demonstrated as a promising platform for large-area terrestrial PVs overcoming the above obstacles.
Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the
CVD growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of
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The quasi-Fermi level splitting (ΔEF) represents the resulting VOC that would occur to balance the photogenerated current. from publication: A direct thin-film path towards low-cost large-Area
III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity
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This work introduces a growth mode that enables direct writing of single-crystalline III–V''s on amorphous substrates, thus further expanding their utility for various applications and presenting an important advance towards universal integration of III– V''s on application-specific substrates by direct growth. The III–V compound semiconductors exhibit
In this Letter, we report the direct growth of single crystal III–V thin film mesas on amorphous SiO2 on Si using templated liquid phase growth. Unlike previous works, where crystal sizes demonstrated have been less than ∼10 μm, here, we show that by tuning the crystal growth conditions, crystals with dimensions greater than 100 μm and of high electron mobility
Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1-3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high
A direct thin-film path towards low-cost large-area III-V photovoltaics journal, July 2013. Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H. Vapor Transport Deposition for Thin Film III-V Photovoltaics. Technical Report Boettcher, Shannon; Greenaway, (100)-oriented GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of
Supporting: 5, Contrasting: 1, Mentioning: 113 - III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we
A direct thin-film path towards low-cost large-area III-V photovoltaics (PDF) A direct thin-film path towards low-cost large-area III-V photovoltaics | Ali Javey - Academia Academia no longer supports Internet Explorer.
DOI: 10.1038/srep02275 Corpus ID: 10077396; A direct thin-film path towards low-cost large-area III-V photovoltaics @article{Kapadia2013ADT, title={A direct thin-film path towards low-cost large-area III-V photovoltaics}, author={Rehan Kapadia and Zhibin Yu and Hsin-Hua Hank Wang and Maxwell Zheng and Corsin Battaglia and Mark Hettick and Daisuke
We demonstrate 1-3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth
III-V solar cells (SCs) are considered to be the solution for low-cost and highly efficient SCs due to their near optimum band gap and excellent optoelectronic properties 1.Further, in comparison to silicon (Si) SCs, III-V SCs have reported high efficiency with less absorber layer thickness 2.However, III-V SCs are not widely used for commercial applications
(c), Top-view SEM image of InP peeled off from Mo foil, partially etched in 1% HCl to highlight grain boundaries. from publication: A direct thin-film path towards low-cost large-Area III-V
Although III–V compound semiconductor multi‐junction cells show the highest efficiency among all types of solar cells, their cost is quite high due to expensive substrates, long epitaxial growth and complex balance of system components. To reduce the cost, ultra‐thin films with advanced light management are desired. Here effective light trapping in freestanding thin
Article: A direct thin-film path towards low-cost large-area III-V photovoltaics III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells.
(c), Tilt view false-color SEM image of contoured InP grown via pre-texturing the Indium film. from publication: A direct thin-film path towards low-cost large-Area III-V photovoltaics | III-V
The design and performance of solar cells based on InP grown by the nonepitaxial thin‐film vapor–liquid–solid (TF‐VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p‐InP absorber layer, n‐TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p‐doping process for TF‐VLS grown
We show that large grain (up to 100 μm), continuous, polycrystalline InP thin films are readily grown on Mo foils within a large growth parameter window, with optical and
Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-qualityIII-V thin-filmson metal foils as a promising platform for large-area terrestrial PVs overcoming the above
A platform based on crystalline indium phosphide is presented that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques and demonstrates excellent optoelectronic properties. Recent developments in nanophotonics have provided a clear
Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is
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