A bulk material without inversion symmetry can generate a direct current under illumination. This interface-free current generation mechanism, referred to as the bulk photovoltaic effect (BPVE), does not rely on p - n junctions.
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The shift current (SHC) has been accepted as the primary mechanism of the bulk photovoltaic effect (BPVE) in ferroelectrics, which is much different from the typical p-n junction-based photovoltaic mechanism in heterogeneous materials. In the present
This interface-free current generation mechanism, referred to as the bulk photovoltaic effect (BPVE), does not rely on p - n junctions. Here, we explore the shift current generation, a major mechanism responsible for the BPVE, in single-element two-dimensional (2D) ferroelectrics represented by phosphorene-like monolayers of As, Sb, and Bi.
It is shown that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form. The photovoltaic (PV) effect in polar materials offers great potential for light-energy
photovoltaic current is essentially determined by the change of wave functions upon photoexcitation of an electron from the valence to the conduction band. Our theory also reveals that the bulk photovoltaic efFect can occur even in pure nonpyroelectric piezoelectric crystals, e.g., Te and GaP, which have no polar axis and therefore no a priori
Recent progress of bulk photovoltaic effect in acentric single crystals and optoelectronic devices Yangyang Dang1,*and Xutang Tao2 3 SUMMARY Schematic diagram of J-V curve of bulk photovoltaic effect (BPVE) in the ferroelectrics-based solar cell.J sc and V oc are shown. (C) Schematic diagram of the isotropic nonequilibrium carriers
We present a phenomenological description and a quantum-mechanical theory of electron transport in the anomalous bulk photovoltaic effect (ABPVE) in ferroelectrics. Our theory is based on a quadratic response formalism which leads to an exact expression for the short-circuit photovoltaic current (SCPVC). This theory indicates the existence of an ABPVE even in a
We present a phenomenological description and a quantum-mechanical theory of electron transport in the anomalous bulk photovoltaic effect (ABPVE) in ferroelectrics. Our theory is
Studies of photo-induced effects in ferroelectrics have experienced a revival due to the demonstration of a variety of fascinating physical effects, and in particular an increase in the power
transport in the anomalous bulk photovoltaic effect (ABPVE) in ferroelectrics. Our theory is based on a quadratic response formalism which leads to an exact expression for the short-circuit photovoltaic current (SCPVC). This theory indicates the existence of an ABPVE even in a sys-tem of pure Bloch states. %e demonstrate the capability of our
Ferroelectric materials for photovoltaics have sparked great interest because of their switchable photoelectric responses and above-bandgap photovoltages that violate conventional photovoltaic theory. However, their relatively low photocurrent and power conversion efficiency limit their potential application in solar cells.
The bulk photovoltaic (BPV) effect in ferroelectric liquid crystals is of increasing scientific interest owing to its great potential for light-energy conversion. The ferroelectric nematic phase exhibits a huge spontaneous polarization that can be aligned to a preferred direction. In this Letter, we investigate the tensorial properties of the BPV effect in the planarly aligned ferroelectric
We report large photovoltaic enhancement by A-site substitutions in a model ferroelectric photovoltaic material, BiFeO 3. As revealed by optical measurements and supported by theoretical calculations, the enhancement is
The bulk photovoltaic (PV) effect in ferroelectric materials has attracted worldwide attention for novel optoelectronic applications utilizing above-bandgap photovoltages, light-polarization-dependent photocurrents, photocurrent generation by terahertz light, etc. One of the drawbacks is its weak photoresponse under visible-light irradiation, and thereby the development of visible
2 · Non-toxic molecular ferroelectrics have attracted significant interest due to their unique flexibility, low costs, and environmental friendliness. However, the variety of such materials
The bulk photovoltaic effect (BPVE) leads to directed photocurrents and photovoltages in bulk materials. Unlike photovoltages in p-n junction solar cells that are limited by carrier recombination to values below the band-gap energy of the absorbing material, BPVE photovoltages have been shown to greatly exceed the band-gap energy. Therefore, the BPVE
The PV effects in ferroelectric materials have been intensively studied for many years. From the 1950s–1960s, the generation of continuous photocurrents was reported for ferroelectric crystals of BaTiO 3 9) and LiNbO 3. 10) Glass 2) produced a relatively high open-circuit voltage (Voc) of about 2,000 V for Fe-doped LiNbO 3 single crystals.
A bulk material without inversion symmetry can generate a direct current under illumination. This interface-free current generation mechanism, referred to as the bulk
The re-discovery photovoltaic effect in ferroelectrics has far reaching implications that have been till now demonstrated. The obvious ones include the realization of junction free-photovoltaic
Ferroelectrics are the largest family of bulk photovoltaic materials due to their inherent lack of inversion symmetry, and research on the bulk photovoltaic effect in ferroelectrics is gloriously historical [3]. The majority of classical ferroelectric materials are oxides with perovskite structures.
Ferroelectric oxides are attractive materials for constructing efficient solar cells. The mechanism includes the anomalous photovoltaic effect (APE) and the bulk photovoltaic effect (BPE). The BPE refers to the generation of a steady photocurrent and above-bandgap photovoltage in a single-phase homogeneous material lacking inversion symmetry. The mechanism of BPE is different
The bulk photovoltaic effect (BPVE), sometimes also called the photogalvanic effect (PGE), refers to the electric current generation in a homogeneous material under light illumination, in contrast to the traditional photovoltaics where a heterojunction, such as a p–n junction, is needed to separate the photo-generated carriers (). 1–4 It has attracted increasing
Inset shows the characteristic I–V curve of the bulk photovoltaic effect in 3D ferroelectrics. The black and red lines represent the I–V curves at the dark conditions and bright conditions
One of the most promising alternative sources of photocurrent is the bulk photovoltaic effect A. M. First principles calculation of the shift current photovoltaic effect in ferroelectrics.
In this study, we report the non-synchronous BPVE in two-dimensional (2D) interlayer-sliding ferroelectric materials featuring unswitchable in-plane BPVE (light-induced
The high-voltage bulk photovoltaic effect in ferroelectrics was theoretically and experimentally studied focusing on the nonlinear dielectric response. The steady current in the absence of applied voltage, called "photocurrent", is considered as a result of photocarriers and the asymmetric electromotive force induced by near-ultraviolet radiation.
npj Computational Materials 8, Article number: 138 (2022) Cite this article Spontaneous polarization and bulk photovoltaic effect (BPVE) are two concomitant physical properties in ferroelectric materials.
Bulk photovoltaic effect, which arises from crystal symmetry-driven charge carrier separation, is an intriguing physical phenomenon that has attracted extensive interest in attracted particular interest in 30photo ferroelectrics . Its unique intercorrelated in-plane and out-of-plane electrical polarization31-33 and narrow bandgap (around 1.
With the discovery of photovoltaic (PV) energy conversion efficiencies up to 10% in domain-engineered BiFeO 3 ferroelectric films under above-bandgap illumination (1, 2), research in photoferroelectric phenomena has strongly intensified (3, 4) cause of their polar structure, ferroelectrics display unconventional PV phenomena such as the bulk PV effect
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Two-Dimensional Ferroelectrics
The bulk photovoltaic (PV) effect in ferroelectric materials has attracted worldwide attention for novel optoelectronic applications utilizing above-bandgap photovoltages, light-polarization-dependent photocurrents,
The high-voltage bulk photovoltaic effect in ferroelectrics was theoretically and experimentally studied focusing on the nonlinear dielectric response. The steady current in the absence of applied
As the photovoltaic (PV) industry continues to evolve, advancements in bulk photovoltaic effect of ferroelectrics have become critical to optimizing the utilization of renewable energy sources. From innovative battery technologies to intelligent energy management systems, these solutions are transforming the way we store and distribute solar-generated electricity.
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